Manufacturer Part Number
IRFS9N60APBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a DPAK (TO-263) package
Product Features and Performance
High voltage MOSFET with drain-source voltage up to 600V
Low on-resistance of 750mΩ at 5.5A, 10V
Continuous drain current up to 9.2A at 25°C
Operating temperature range of -55°C to 150°C
Input capacitance of 1400pF at 25V
Power dissipation up to 170W at 25°C
Product Advantages
Excellent power handling capability
Efficient performance with low on-resistance
Compact DPAK (TO-263) package
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(ON)): 750mΩ @ 5.5A, 10V
Drain Current (ID): 9.2A (Continuous at 25°C)
Input Capacitance (Ciss): 1400pF @ 25V
Power Dissipation (PD): 170W (at 25°C)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely available part
Replacement or upgraded options may be available from the manufacturer
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency with low on-resistance
Compact and easy-to-use DPAK (TO-263) package
Reliable and safe operation with RoHS3 compliance
Suitable for a variety of power electronics applications
