IRFR9210PBF - Vishay Siliconix

Manufacturer Part Number

IRFR9210PBF

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs Max): ±20V

On-Resistance (Rds(on) Max): 3Ω @ 1.1A, 10V

Continuous Drain Current (Id): 1.9A @ 25°C

Input Capacitance (Ciss Max): 170pF @ 25V

Power Dissipation (Max): 2.5W (Ta), 25W (Tc)

Gate Charge (Qg Max): 8.9nC @ 10V

Product Advantages

Low on-resistance for improved efficiency

High voltage operation

Surface mount package for compact designs

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: P-Channel

Threshold Voltage (Vgs(th) Max): 4V @ 250µA

Drive Voltage (Max Rds(on), Min Rds(on)): 10V

Operating Temperature: -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Manufacturer's Packaging: D-Pak (TO-252-3)

Compatibility

Supplier Device Package: D-Pak (2 Leads + Tab), SC-63

Packaging: Tube

Application Areas

Suitable for a variety of power management and control applications

Product Lifecycle

Current product, no information on discontinuation or replacements

Key Reasons to Choose

Low on-resistance for high efficiency

High voltage operation capability

Compact surface mount package

RoHS compliance for environmental regulations