Manufacturer Part Number
IRFR224TRPBF
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
250V Drain-Source Voltage
8A Continuous Drain Current
1Ω On-Resistance
260pF Input Capacitance
14nC Gate Charge
-55°C to 150°C Operating Temperature Range
5W Power Dissipation (Ta), 42W Power Dissipation (Tc)
MOSFET Technology
Product Advantages
High Voltage Capability
Low On-Resistance
High Switching Speed
Wide Operating Temperature Range
Compact D-Pak Packaging
Key Technical Parameters
Drain to Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.1Ω @ 2.3A, 10V
Continuous Drain Current (Id): 3.8A (Tc)
Input Capacitance (Ciss): 260pF @ 25V
Gate Charge (Qg): 14nC @ 10V
Quality and Safety Features
RoHS3 Compliant
D-Pak Packaging for Reliable Surface Mount Mounting
Compatibility
Compatible with a wide range of electronic circuits and applications that require a high-voltage, low on-resistance MOSFET
Application Areas
Switching Power Supplies
Motor Drives
Inverters
Converters
Industrial Controls
Automotive Electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Wide operating temperature range for use in harsh environments
Compact D-Pak packaging for space-constrained designs
RoHS compliance for environmentally-friendly applications