Manufacturer Part Number
IRFR210TRPBF
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET transistor
Part of the Vishay/Siliconix discrete semiconductor product line
Product Features and Performance
Drain to Source Voltage (Vdss): 200V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-State Resistance (Rds(on)): 1.5Ω @ 1.6A, 10V
Continuous Drain Current (Id): 2.6A at 25°C (Tc)
Input Capacitance (Ciss): 140pF @ 25V
Power Dissipation: 2.5W (Ta), 25W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Product Advantages
Low on-state resistance for efficient power conversion
High voltage capability for wide range of applications
Compact D-Pak surface mount package
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 4V @ 250μA
Gate Charge (Qg): 8.2nC @ 10V
Drive Voltage Range: 10V
Quality and Safety Features
RoHS3 compliant
Tin-Lead (SnPb) plating
Compatibility
Compatible with various surface mount circuit board designs
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General purpose power switching
Product Lifecycle
Currently in active production
No discontinuation or replacement planned
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact, surface mount package
Reliable and robust performance across wide temperature range
Compatibility with common power circuit designs
RoHS compliance for environmentally-friendly applications