Manufacturer Part Number
IRFR110TRPBF
Manufacturer
Vishay / Siliconix
Introduction
The IRFR110TRPBF is a discrete N-channel MOSFET transistor from Vishay/Siliconix. It is part of the IRFR series of power MOSFET devices.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs) Max
540mOhm On-Resistance (Rds(on)) Max @ 2.6A, 10V
3A Continuous Drain Current (Id) @ 25°C
180pF Input Capacitance (Ciss) Max @ 25V
5W Power Dissipation (Pd) Max @ 25°C
25W Power Dissipation (Pd) Max @ 100°C
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Wide operating temperature range (-55°C to 150°C)
Surface mount package for compact designs
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
4V Gate Threshold Voltage (Vgs(th)) Max @ 250A
3nC Gate Charge (Qg) Max @ 10V
Quality and Safety Features
RoHS3 Compliant
D-Pak (TO-252-3) Surface Mount Package
Compatibility
Suitable for a variety of power switching and amplification applications.
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Consumer electronics
Product Lifecycle
This product is an active and widely used part in the Vishay/Siliconix MOSFET portfolio. Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent on-resistance and current handling performance
Wide operating temperature range for diverse applications
Compact surface mount package for space-constrained designs
RoHS compliance for use in modern electronics
IRFR110ATFFairchild (onsemi)
IRFR110NTRPBFElectro-Films (EFI) / Vishay