Manufacturer Part Number
IRFR014TRPBF
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
200mOhm Maximum On-Resistance (Rds(on))
7A Continuous Drain Current (Id) at 25°C
300pF Maximum Input Capacitance (Ciss)
11nC Maximum Gate Charge (Qg) at 10V
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
Fast switching speed and low gate charge
Compact D-Pak surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 200mOhm
Continuous Drain Current (Id): 7.7A
Input Capacitance (Ciss): 300pF
Gate Charge (Qg): 11nC
Power Dissipation: 2.5W (Ta), 25W (Tc)
Quality and Safety Features
RoHS3 compliant
D-Pak package for surface mount assembly
Compatibility
Suitable for use in power switching, amplifier, and driver applications
Application Areas
Power supplies
Motor drives
Switching power converters
Lighting control
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Low on-resistance for efficient power switching
Fast switching speed and low gate charge for high-frequency operation
Compact surface mount package for space-saving designs
Wide operating temperature range for diverse applications
RoHS3 compliance for environmentally-friendly designs