Manufacturer Part Number
IRFPE50PBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with 800V drain-source voltage
Product Features and Performance
Low on-resistance of 1.2 ohms at 4.7 amps, 10 volts
Continuous drain current up to 7.8 amps at 25°C
High power dissipation of 190 watts at case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 200 nC at 10 volts
Product Advantages
Excellent performance for high-power switching applications
Robust design with high voltage and current handling capabilities
Efficient heat dissipation for reliable operation
Key Technical Parameters
800V drain-source voltage
±20V gate-source voltage
2 ohm on-resistance at 4.7 amps, 10 volts
8 amps continuous drain current at 25°C
190 watts maximum power dissipation at case temperature
Quality and Safety Features
RoHS3 compliant
TO-247AC package for secure mounting and heat sinking
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Power converters and inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently available, no plans for discontinuation. Replacements and upgrades may be available from Vishay or other manufacturers.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for high-power switching
Robust design with high voltage and current handling
Efficient heat dissipation for reliable operation
RoHS compliance for use in a variety of applications