Manufacturer Part Number
IRFL9014
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)): 500mΩ @ 1.1A, 10V
Continuous Drain Current (Id) @ 25°C: 1.8A
Input Capacitance (Ciss): 270pF @ 25V
Power Dissipation: 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
High voltage and current handling capability
Compact surface mount package
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)): 4V @ 250μA
Gate Charge (Qg): 12nC @ 10V
Quality and Safety Features
RoHS non-compliant
Compatibility
TO-261-4, TO-261AA package
Application Areas
Power Switching
Amplifier Circuits
Motor Control
Product Lifecycle
Mature product
Replacements and upgrades available
Key Reasons to Choose
Reliable and proven performance
Wide operating temperature range
Efficient power switching with low on-resistance
Compact surface mount package