Manufacturer Part Number
IRFIB6N60APBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a TO-220 package
Product Features and Performance
600V drain-source voltage
5A continuous drain current at 25°C
750mΩ maximum on-resistance at 3.3A, 10V
1400pF maximum input capacitance at 25V
60W maximum power dissipation at Tc
Product Advantages
Suitable for high-power, high-voltage applications
Low on-resistance for high efficiency
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 750mΩ @ 3.3A, 10V
Continuous Drain Current (Id): 5.5A @ 25°C
Input Capacitance (Ciss): 1400pF @ 25V
Power Dissipation (Pd): 60W @ Tc
Quality and Safety Features
RoHS3 compliant
Isolated tab for enhanced safety
Compatibility
Compatible with a wide range of high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation. Replacement or upgrade options are available.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Robust and reliable design
RoHS compliance for environmental sustainability
Wide range of compatible applications
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