Manufacturer Part Number
IRFD9120PBF
Manufacturer
Vishay / Siliconix
Introduction
P-Channel MOSFET Transistor
Product Features and Performance
High drain-to-source voltage rating of 100V
Low on-resistance of 600mΩ at 600mA, 10V
Low input capacitance of 390pF at 25V
Maximum power dissipation of 1.3W at 25°C
Wide operating temperature range of -55°C to 175°C
Product Advantages
Suitable for high-voltage, high-power applications
Efficient power handling with low on-resistance
Compact through-hole package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 600mΩ @ 600mA, 10V
Continuous Drain Current (Id): 1A at 25°C
Input Capacitance (Ciss): 390pF at 25V
Power Dissipation (Ptot): 1.3W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 175°C
Compatibility
Through-hole mounting
Application Areas
High-voltage, high-power switching applications
Power amplifiers
Motor control circuits
Power supplies
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
High drain-to-source voltage rating for high-power applications
Low on-resistance for efficient power handling
Compact through-hole package for easy integration
Wide operating temperature range for reliable performance
RoHS3 compliance for environmental and safety considerations
IRFD9120 MOSHARRIS/MOT
IRFD9120PBF MOSElectro-Films (EFI) / Vishay