Manufacturer Part Number
IRFBC30PBF
Manufacturer
Vishay / Siliconix
Introduction
N-channel power MOSFET
Product Features and Performance
High voltage (600V)
Low on-resistance (2.2Ω)
High continuous drain current (3.6A)
Low gate charge (31nC)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
High efficiency
Compact design
Reliable performance
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.2Ω
Continuous Drain Current (Id): 3.6A
Input Capacitance (Ciss): 660pF
Power Dissipation (Pd): 74W
Quality and Safety Features
RoHS3 compliant
Industrial-grade quality
Compatibility
Suitable for a variety of power electronics and high-power applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial controls
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose
High voltage and current handling capability
Low on-resistance for high efficiency
Wide operating temperature range
Reliable and durable performance
Compact and space-saving design
Suitable for a wide range of high-power applications