Manufacturer Part Number
IRF9630S
Manufacturer
Vishay / Siliconix
Introduction
P-channel power MOSFET with high power density and low on-resistance
Product Features and Performance
Low on-resistance (Rds(on)) of 800 mΩ at 3.9 A, 10 V
High drain-to-source voltage rating of 200 V
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 700 pF at 25 V
High power dissipation of 3 W at Ta and 74 W at Tc
Product Advantages
Efficient power management
Compact and high-density design
Reliable operation in harsh environments
Key Technical Parameters
MOSFET technology
P-channel FET type
Drain-to-source voltage (Vdss) of 200 V
Gate-to-source voltage (Vgs) of ±20 V
Continuous drain current (Id) of 6.5 A at 25°C
Quality and Safety Features
RoHS non-compliant
DPAK (TO-263) package
Compatibility
Surface mount
Application Areas
Power management circuits
Motor control
Switching power supplies
Industrial electronics
Product Lifecycle
Mature product
Replacements and upgrades may be available
Key Reasons to Choose
High power density and efficiency
Reliable performance in a wide temperature range
Compact and easy to integrate
Well-suited for power management applications