Manufacturer Part Number
IRF9610STRRPBF
Manufacturer
Vishay / Siliconix
Introduction
This product is a P-Channel MOSFET transistor with a DPAK (TO-263) package.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 200V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-State Resistance (Rds(on)): 3Ω @ 900mA, 10V
Continuous Drain Current (Id) @ 25°C: 1.8A (Tc)
Input Capacitance (Ciss): 170pF @ 25V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Gate Charge (Qg): 11nC @ 10V
Product Advantages
High voltage and current handling capability
Low on-state resistance
Suitable for high-power switching applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Threshold Voltage (Vgs(th)): 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Quality and Safety Features
Compliant with RoHS (Restriction of Hazardous Substances) directive
Compatibility
Compatible with a variety of electronic circuits and power supply designs
Application Areas
Suitable for use in high-power switching applications, such as power supplies, motor drives, and industrial control systems
Product Lifecycle
The IRF9610 is an established product and is not nearing discontinuation.
Replacement or upgrade options are available, such as the IRF9620 and IRF9630 series.
Key Reasons to Choose This Product
High voltage and current handling capability, making it suitable for demanding power applications
Low on-state resistance, leading to improved efficiency and reduced power dissipation
Wide operating temperature range, allowing use in diverse environmental conditions
Surface mount package for convenient PCB integration
Proven reliability and long-term availability from a reputable manufacturer
