Manufacturer Part Number
IRF740STRLPBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
DPAK (TO-263) Surface Mount Package
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 400V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10V
Product Advantages
High voltage and power handling capability
Low on-resistance
Compact DPAK (TO-263) surface mount package
Wide operating temperature range
Key Technical Parameters
Voltage, current, on-resistance, capacitance, power dissipation
Quality and Safety Features
ROHS3 compliant
Compatibility
General-purpose MOSFET for power conversion and control applications
Application Areas
Power supplies, motor drives, lighting, industrial controls
Product Lifecycle
Currently in production
Replacement and upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
High performance, high voltage MOSFET
Compact surface mount package
Wide operating temperature range
Proven reliability and quality from Vishay/Siliconix