Manufacturer Part Number
IRF634PBF
Manufacturer
Vishay / Siliconix
Introduction
The IRF634PBF is a high-performance N-Channel MOSFET transistor from Vishay Siliconix, designed for a wide range of power electronics and switching applications.
Product Features and Performance
250V Drain-to-Source Voltage
1A Continuous Drain Current
450mΩ Maximum On-Resistance
770pF Maximum Input Capacitance
41nC Maximum Gate Charge
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Excellent power handling capabilities
Low on-resistance for improved efficiency
Fast switching speed
Robust design for reliable operation
Widely compatible with various power electronics systems
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 8.1A
On-Resistance (Rds(on)): 450mΩ
Input Capacitance (Ciss): 770pF
Power Dissipation (Tc): 74W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
Designed and manufactured to Vishay's high-quality standards
Compatibility
The IRF634PBF is compatible with a wide range of power electronics applications, including motor drives, switch-mode power supplies, and various industrial and consumer electronics.
Application Areas
Power electronics
Motor control
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
The IRF634PBF is an active product in Vishay's portfolio, and there are no plans for discontinuation. Replacement options and upgrades may be available from Vishay or other MOSFET manufacturers.
Key Reasons to Choose This Product
Excellent power handling capabilities with a 250V Drain-to-Source Voltage and 8.1A Continuous Drain Current.
Low on-resistance of 450mΩ for improved efficiency in power electronics applications.
Fast switching speed and high-speed operation supported by the 41nC Maximum Gate Charge.
Robust design and wide operating temperature range of -55°C to 150°C for reliable performance.
RoHS3 compliance and through-hole mounting for easy integration into various power electronics systems.
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