Manufacturer Part Number
IRF630PBF
Manufacturer
Vishay / Siliconix
Introduction
The IRF630PBF is a discrete N-channel MOSFET transistor from Vishay/Siliconix, a leading manufacturer of power semiconductor devices.
Product Features and Performance
High voltage MOSFET with a drain-source voltage (Vdss) of 200V
Low on-resistance (Rds(on)) of 400mΩ @ 5.4A, 10V
Continuous drain current (Id) of 9A at 25°C case temperature
Operating temperature range of -55°C to 150°C
Input capacitance (Ciss) of 800pF @ 25V
Power dissipation (Ptot) of 74W at 25°C case temperature
Product Advantages
Excellent power handling capability
Low conduction losses
Suitable for high voltage, high current applications
Robust and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 400mΩ @ 5.4A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220AB package for efficient heat dissipation
Meets industrial and automotive safety and reliability standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, switch-mode power supplies, and industrial controls.
Application Areas
Power electronics
Motor drives
Switch-mode power supplies
Industrial controls
Product Lifecycle
The IRF630PBF is an active and widely used product in Vishay's portfolio.
Replacement or upgraded products are available if necessary.
Key Reasons to Choose This Product
Excellent power handling capability and low conduction losses
Robust and reliable performance in harsh environments
Compatibility with a wide range of power electronics applications
Proven track record and availability from a reputable manufacturer