Manufacturer Part Number
IRC830PBF
Manufacturer
Vishay / Siliconix
Introduction
High-power N-channel MOSFET for switching applications
Product Features and Performance
High drain-source breakdown voltage of 500V
Low on-resistance of 1.5Ω at 2.7A, 10V
Fast switching speed
High current capability of 4.5A (continuous) at 25°C
Product Advantages
Efficient power conversion and control
Robust design for high-stress applications
Reliable performance in demanding environments
Key Technical Parameters
Vdss: 500V
Vgs (max): ±20V
Rds (on) (max): 1.5Ω @ 2.7A, 10V
Id (continuous): 4.5A at 25°C
Ciss (max): 610pF @ 25V
Qg (max): 38nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
Suitable for use in a wide range of power electronics and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Switching power converters
Product Lifecycle
Actively supported by the manufacturer
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and rugged design
Proven track record in demanding applications
Broad compatibility and versatility
Availability of technical support and resources from the manufacturer
