DG202BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

DG202BDY-T1-E3

Manufacturer

vishay-siliconix

Introduction

The DG202BDY-T1-E3 is an Analog Switch from Vishay-Siliconix, designed for Interface applications, including Multiplexers and Demultiplexers.

Product Features and Performance

SPST NO switch circuit

1:1 Multiplexer/Demultiplexer circuit

4 integrated circuits

On-State Resistance maxes out at 85Ohm

Channel-to-Channel Matching at 2Ohm

Operates on a supply voltage range from 4.5V to 25V (single) and ±4.5V to ±22V (dual)

Switching times are 300ns (on) and 200ns (off)

Charge Injection limited to 1pC

Channel Capacitance at 5pF (off state)

Low Current Leakage at 500pA (max)

Exceptional Crosstalk performance at -95dB @ 100kHz

Product Advantages

Precision channel matching improves performance in analog applications

Low charge injection for reduced signal distortion

High-speed switching suitable for fast signal routing

Low leakage current enhances signal integrity

Robust crosstalk suppression for clearer signal paths

Key Technical Parameters

On-State Resistance (Max): 85Ohm

Voltage Supply: 4.5V ~ 25V (Single), ±4.5V ~ 22V (Dual)

Switch Time (Ton/Toff) (Max): 300ns/200ns

Channel Capacitance (Off): 5pF

Current Leakage (Max): 500pA

Quality and Safety Features

Operating Temperature range of -40°C to 85°C ensures reliable performance in various environments

Compatibility

Surface Mount Technology (SMT) for modern PCB layouts

Packaged in a 16-SOIC form factor for standardized integration

Application Areas

Analog signal routing

Data acquisition systems

Communication systems

Product Lifecycle

Active status signifies ongoing manufacturing and support

No indication of nearing discontinuation, ensuring availability for future projects

Several Key Reasons to Choose This Product

Vishay-Siliconix brand reliability and support

Flexible voltage support enhances compatibility with various systems

Rapid switching capabilities enable high-performance data and signal management

Low signal distortion metrics (charge injection and leakage) for high-fidelity applications

Broad application suitability from consumer electronics to complex data systems