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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - ArraysVS-MBRD660CT-M3
Vishay General Semiconductor - Diodes Division
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See specifications for product details.

VS-MBRD660CT-M3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-MBRD660CT-M3
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-VS-MBRD660CT-M3
ECAD Model
Parts Description
DIODE SCHOTTKY 60V 3A DPAK
Detailed Description
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Data sheet
VS-MBRD650,660CT-M3.pdf
RoHs Status
ROHS3 Compliant
In stock: 134950

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Specifications

VS-MBRD660CT-M3 Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-MBRD660CT-M3 technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-MBRD660CT-M3

Product Attribute Attribute Value  
Manufacturer Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A  
Voltage - DC Reverse (Vr) (Max) 60 V  
Technology Schottky  
Supplier Device Package D-PAK (TO-252AA)  
Speed Fast Recovery =< 500ns, > 200mA (Io)  
Series -  
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63  
Product Attribute Attribute Value  
Package Tube  
Operating Temperature - Junction -40°C ~ 150°C  
Mounting Type Surface Mount  
Diode Configuration 1 Pair Common Cathode  
Current - Reverse Leakage @ Vr 100 µA @ 50 V  
Current - Average Rectified (Io) (per Diode) 3A  
Base Product Number MBRD660  

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-MBRD660CT-M3

Product Attribute VS-MBRD660CT-M3 VS-MBRD650CT-M3 VS-MBRB4045CTHM3 VS-MBRB20100CTTRLP
Part Number VS-MBRD660CT-M3 VS-MBRD650CT-M3 VS-MBRB4045CTHM3 VS-MBRB20100CTTRLP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Package Tube Tube Tube Tape & Reel (TR)
Current - Average Rectified (Io) (per Diode) 3A 3A 20A 10A
Series - - Automotive, AEC-Q101 -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Supplier Device Package D-PAK (TO-252AA) D-PAK (TO-252AA) TO-263AB (D²PAK) TO-263AB (D²PAK)
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 600 mV @ 20 A 800 mV @ 10 A
Base Product Number MBRD660 MBRD650 MBRB4045 MBRB20
Current - Reverse Leakage @ Vr 100 µA @ 50 V 100 µA @ 50 V 1 mA @ 45 V 100 µA @ 100 V
Voltage - DC Reverse (Vr) (Max) 60 V 50 V 45 V 100 V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology Schottky Schottky Schottky Schottky
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)

VS-MBRD660CT-M3 Datasheet PDF

Download VS-MBRD660CT-M3 pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-MBRD660CT-M3 - Vishay General Semiconductor - Diodes Division.

Datasheets
VS-MBRD650,660CT-M3.pdf
PCN Obsolescence/ EOL
Multiple Devices Improvements 12/Sep/2016.pdf
PCN Assembly/Origin
LeadFrame/Mold Compound Chgs 12/Sep/2016.pdf

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Asia India 4
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Vishay General Semiconductor - Diodes Division

VS-MBRD660CT-M3

Vishay General Semiconductor - Diodes Division
32D-VS-MBRD660CT-M3

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