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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleVS-8EWS12S-M3
Vishay General Semiconductor - Diodes Division
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See specifications for product details.

VS-8EWS12S-M3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-8EWS12S-M3
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-VS-8EWS12S-M3
ECAD Model
Parts Description
DIODE GEN PURP 1.2KV 8A DPAK
Detailed Description
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Data sheet
VS-8EWS(08,12)S-M3.pdf
RoHs Status
ROHS3 Compliant
In stock: 29518

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Specifications

VS-8EWS12S-M3 Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-8EWS12S-M3 technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-8EWS12S-M3

Product Attribute Attribute Value  
Manufacturer Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A  
Voltage - DC Reverse (Vr) (Max) 1200 V  
Technology Standard  
Supplier Device Package D-PAK (TO-252AA)  
Speed Fast Recovery =< 500ns, > 200mA (Io)  
Series -  
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63  
Product Attribute Attribute Value  
Package Tube  
Operating Temperature - Junction -55°C ~ 150°C  
Mounting Type Surface Mount  
Current - Reverse Leakage @ Vr 50 µA @ 1200 V  
Current - Average Rectified (Io) 8A  
Capacitance @ Vr, F -  
Base Product Number 8EWS12  

Parts Introduction

Manufacturer Part Number

VS-8EWS12S-M3

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-voltage, fast recovery, power rectifier diode

Product Features and Performance

Fast recovery time ≤ 500 ns

High reverse voltage rating up to 1200 V

High average rectified current up to 8 A

Suitable for high-frequency switching applications

Low forward voltage drop

Rugged and reliable performance

Product Advantages

Excellent high-voltage and high-current handling capability

Fast switching for improved efficiency in power conversion circuits

Compact and space-saving D-PAK (TO-252AA) package

Suitable for a wide range of industrial and consumer applications

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 1200 V

Current Average Rectified (Io): 8 A

Voltage Forward (Vf) (Max) @ If: 1.1 V @ 8 A

Current Reverse Leakage @ Vr: 50 A @ 1200 V

Operating Temperature Junction: -55°C ~ 150°C

Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Quality and Safety Features

RoHS3 compliant

Reliable and rugged performance

Suitable for high-temperature and high-voltage applications

Compatibility

Surface mount D-PAK (TO-252AA) package

Compatible with a wide range of power conversion and switching circuits

Application Areas

Power supplies

Inverters

Motor drives

Welding equipment

Industrial and consumer electronics

Product Lifecycle

This is an active product, not nearing discontinuation

Replacement and upgrade options are available from the manufacturer

Key Reasons to Choose This Product

Exceptional high-voltage and high-current handling capability

Fast switching performance for improved efficiency in power conversion

Compact and space-saving D-PAK (TO-252AA) package

Reliable and rugged construction for demanding applications

Wide operating temperature range and RoHS3 compliance

Compatibility with a broad range of power conversion and switching circuits

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-8EWS12S-M3

Product Attribute VS-8EWS12S-M3 VS-8EWS16STRR-M3 VS-8EWS16STRPBF VS-8EWS16SLHM3
Part Number VS-8EWS12S-M3 VS-8EWS16STRR-M3 VS-8EWS16STRPBF VS-8EWS16SLHM3
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Technology Standard Standard Standard Standard
Package Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252AA) D-PAK (TO-252AA) D-PAK (TO-252AA) D-PAK (TO-252AA)
Current - Reverse Leakage @ Vr 50 µA @ 1200 V 50 µA @ 1600 V 50 µA @ 1600 V 50 µA @ 1600 V
Voltage - DC Reverse (Vr) (Max) 1200 V 1600 V 1600 V 1600 V
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Operating Temperature - Junction -55°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Capacitance @ Vr, F - - - -
Base Product Number 8EWS12 8EWS16 8EWS16 8EWS16
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Series - FRED Pt® - Automotive, AEC-Q101
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A 1.1 V @ 8 A 1.1 V @ 8 A 1.1 V @ 8 A

VS-8EWS12S-M3 Datasheet PDF

Download VS-8EWS12S-M3 pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-8EWS12S-M3 - Vishay General Semiconductor - Diodes Division.

Datasheets
VS-8EWS(08,12)S-M3.pdf
PCN Other
DD-018-2015-Rev-00 25/May/2015.pdf
PCN Obsolescence/ EOL
Multiple Devices Improvements 12/Sep/2016.pdf
PCN Assembly/Origin
LeadFrame/Mold Compound Chgs 12/Sep/2016.pdf

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Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
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Vishay General Semiconductor - Diodes Division

VS-8EWS12S-M3

Vishay General Semiconductor - Diodes Division
32D-VS-8EWS12S-M3

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