VS-6CWQ10FN-M3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

VS-6CWQ10FN-M3

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-performance Schottky rectifier diode array in a compact D-PAK (TO-252AA) package

Product Features and Performance

Fast recovery time ≤ 500 ns for high-speed switching applications

Low forward voltage drop of 960 mV @ 6 A for high efficiency

Low reverse leakage current of 1 mA @ 100 V

Capable of 3.5 A average rectified current per diode

Operating temperature range of -40°C to 150°C

Product Advantages

Compact D-PAK (TO-252AA) package for space-saving design

High reliability and ruggedness

Suitable for high-frequency, high-current switching applications

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 100 V

Current Average Rectified (Io) (per Diode): 3.5 A

Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Diode Configuration: 1 Pair Common Cathode

Quality and Safety Features

RoHS3 compliant

Meets safety and quality standards

Compatibility

Suitable for surface mount applications

Application Areas

High-frequency, high-current switching applications

Power supplies, motor drives, and other power electronics

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Compact and space-saving design

High-speed switching and efficiency

Reliable and rugged performance

Wide operating temperature range

Suitable for a variety of power electronics applications