VS-60EPS12-M3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

VS-60EPS12-M3

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-power, fast-recovery, silicon avalanche rectifier diode

Product Features and Performance

High surge current capability

Low forward voltage drop

Fast reverse recovery time

High junction temperature operation

Rugged and reliable

Product Advantages

Excellent electrical performance

Robust and durable construction

Suitable for high-power applications

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 1200 V

Current Average Rectified (Io): 60 A

Current Reverse Leakage @ Vr: 100 A @ 1200 V

Voltage Forward (Vf) (Max) @ If: 1.09 V @ 60 A

Speed: Standard Recovery >500ns, > 200mA (Io)

Operating Temperature Junction: -40°C ~ 150°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for various high-power applications

Application Areas

Power supplies

Inverters

Welding equipment

Motor drives

Industrial and medical equipment

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

High-power and fast-recovery capabilities

Low forward voltage drop for improved efficiency

Wide operating temperature range

Robust and reliable construction

Suitable for a variety of high-power applications