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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleVS-1EFH02-M3/I
VS-1EFH02-M3/I Image
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VS-1EFH02-M3/I - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-1EFH02-M3/I
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-VS-1EFH02-M3/I
ECAD Model
Parts Description
DIODE GEN PURP 200V 1A DO219AB
Detailed Description
Package
DO-219AB
Data sheet
VS-1EFH02-M3.pdf
RoHs Status
ROHS3 Compliant
In stock: 356530

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Specifications

VS-1EFH02-M3/I Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-1EFH02-M3/I technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-1EFH02-M3/I

Product Attribute Attribute Value  
Manufacturer Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ If 930 mV @ 1 A  
Voltage - DC Reverse (Vr) (Max) 200 V  
Technology Standard  
Supplier Device Package DO-219AB (SMF)  
Speed Fast Recovery =< 500ns, > 200mA (Io)  
Series FRED Pt®  
Reverse Recovery Time (trr) 16 ns  
Product Attribute Attribute Value  
Package / Case DO-219AB  
Package Tape & Reel (TR)  
Operating Temperature - Junction -65°C ~ 175°C  
Mounting Type Surface Mount  
Current - Reverse Leakage @ Vr 2 µA @ 200 V  
Current - Average Rectified (Io) 1A  
Capacitance @ Vr, F -  
Base Product Number 1EFH02  

Parts Introduction

Manufacturer Part Number

VS-1EFH02-M3/I

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

Fast Recovery Epitaxial Diode (FRED)

Product Features and Performance

Fast reverse recovery time of 16 ns

Forward voltage drop of 930 mV at 1 A

Reverse leakage current of 2 A at 200 V

Operating temperature range of -65°C to 175°C

Capable of high-speed switching applications over 200 mA and up to 500 ns

Product Advantages

Fast recovery time for high-speed switching applications

Low forward voltage drop for efficient power conversion

Wide operating temperature range

Compliant with RoHS3 directive

Key Technical Parameters

Package: DO-219AB (SMF)

Mounting Type: Surface Mount

Voltage DC Reverse (Vr) (Max): 200 V

Current Average Rectified (Io): 1 A

Technology: Standard

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range

Compatibility

Suitable for high-speed switching applications in power supplies, motor drives, and other power conversion circuits

Application Areas

Power supplies

Motor drives

Power conversion circuits

Product Lifecycle

This product is an active and widely-used device

Replacements and upgrades are readily available

Key Reasons to Choose This Product

Fast reverse recovery time for high-speed switching

Low forward voltage drop for efficient power conversion

Wide operating temperature range

RoHS3 compliance for environmental responsibility

Reliable performance in various power electronics applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-1EFH02-M3/I

Product Attribute VS-1EFH02-M3/I VS-18TQ045STRLPBF VS-20BQ030PBF VS-1EFH02HM3/I
Part Number VS-1EFH02-M3/I VS-18TQ045STRLPBF VS-20BQ030PBF VS-1EFH02HM3/I
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Reverse Recovery Time (trr) 16 ns - - 25 ns
Package Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Base Product Number 1EFH02 18TQ045 20BQ030 1EFH02
Capacitance @ Vr, F - 1400pF @ 5V, 1MHz - -
Package / Case DO-219AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DO-214AA, SMB DO-219AB
Current - Average Rectified (Io) 1A 18A 2A 1A
Series FRED Pt® - - Automotive, AEC-Q101, FRED Pt®
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max) 200 V 45 V 30 V 200 V
Voltage - Forward (Vf) (Max) @ If 930 mV @ 1 A 600 mV @ 18 A 470 mV @ 2 A 930 mV @ 1 A
Operating Temperature - Junction -65°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C
Supplier Device Package DO-219AB (SMF) TO-263AB (D²PAK) DO-214AA (SMB) DO-219AB (SMF)
Current - Reverse Leakage @ Vr 2 µA @ 200 V 2.5 mA @ 45 V 500 µA @ 30 V 2 µA @ 200 V
Technology Standard Schottky Schottky Standard

VS-1EFH02-M3/I Datasheet PDF

Download VS-1EFH02-M3/I pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-1EFH02-M3/I - Vishay General Semiconductor - Diodes Division.

Datasheets
VS-1EFH02-M3.pdf
PCN Assembly/Origin
Wafer Changes 19/Dec/2022.pdf

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Delivery Method

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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VS-1EFH02-M3/I Image

VS-1EFH02-M3/I

Vishay General Semiconductor - Diodes Division
32D-VS-1EFH02-M3/I

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