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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - ArraysVS-12CWQ10FN-M3
Vishay General Semiconductor - Diodes Division
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See specifications for product details.

VS-12CWQ10FN-M3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-12CWQ10FN-M3
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-VS-12CWQ10FN-M3
ECAD Model
Parts Description
DIODE ARRAY SCHOTTKY 100V DPAK
Detailed Description
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Data sheet
VS-12CWQ10FN-M3.pdf
RoHs Status
ROHS3 Compliant
In stock: 98960

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Specifications

VS-12CWQ10FN-M3 Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-12CWQ10FN-M3 technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-12CWQ10FN-M3

Product Attribute Attribute Value  
Manufacturer Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ If 950 mV @ 12 A  
Voltage - DC Reverse (Vr) (Max) 100 V  
Technology Schottky  
Supplier Device Package D-PAK (TO-252AA)  
Speed Fast Recovery =< 500ns, > 200mA (Io)  
Series -  
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63  
Product Attribute Attribute Value  
Package Tube  
Operating Temperature - Junction 150°C (Max)  
Mounting Type Surface Mount  
Diode Configuration 1 Pair Common Cathode  
Current - Reverse Leakage @ Vr 1 mA @ 100 V  
Current - Average Rectified (Io) (per Diode) 6A  
Base Product Number 12CWQ10  

Parts Introduction

Manufacturer Part Number

VS-12CWQ10FN-M3

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-performance, fast-recovery Schottky rectifier array in a space-saving D-PAK (TO-252AA) surface-mount package.

Product Features and Performance

Fast recovery time of ≤ 500 ns

High average rectified current of 6 A per diode

Low forward voltage drop of 950 mV at 12 A

High reverse voltage capability of 100 V

Operatingtemperature range up to 150°C

Product Advantages

Compact surface-mount package

Excellent thermal management

High reliability and ruggedness

Suitable for high-frequency switching applications

Key Technical Parameters

Reverse Leakage Current: 1 mA @ 100 V

Forward Voltage: 950 mV @ 12 A

Reverse Voltage: 100 V

Recovery Time: ≤ 500 ns

Average Rectified Current: 6 A per diode

Operating Temperature: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

High-frequency power supplies

Power factor correction circuits

Freewheeling diode applications

Switch-mode power supplies

Automotive electronics

Product Lifecycle

Current production, no plans for discontinuation

Readily available replacement and upgrade options

Key Reasons to Choose This Product

Compact surface-mount package for space-saving design

Excellent thermal management for high-power applications

Fast recovery time and high reverse voltage capability

Reliable and rugged construction for long-term performance

Suitable for a wide range of high-frequency power electronics applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-12CWQ10FN-M3

Product Attribute VS-12CWQ10FN-M3 VS-12CWQ06FN-M3 VS-12CWQ06FNTRHM3 VS-12CWQ04FNTRHM3
Part Number VS-12CWQ10FN-M3 VS-12CWQ06FN-M3 VS-12CWQ06FNTRHM3 VS-12CWQ04FNTRHM3
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ If 950 mV @ 12 A 610 mV @ 6 A 610 mV @ 6 A 470 mV @ 6 A
Current - Average Rectified (Io) (per Diode) 6A 6A 6A 6A
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) -55°C ~ 150°C
Supplier Device Package D-PAK (TO-252AA) D-PAK (TO-252AA) D-PAK (TO-252AA) D-PAK (TO-252AA)
Technology Schottky Schottky Schottky Schottky
Series - - Automotive, AEC-Q101 Automotive, AEC-Q101
Base Product Number 12CWQ10 12CWQ06 12CWQ06 12CWQ04
Voltage - DC Reverse (Vr) (Max) 100 V 60 V 60 V 40 V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Package Tube Tube Tape & Reel (TR) Tape & Reel (TR)
Current - Reverse Leakage @ Vr 1 mA @ 100 V 3 mA @ 60 V 3 mA @ 60 V 3 mA @ 40 V

VS-12CWQ10FN-M3 Datasheet PDF

Download VS-12CWQ10FN-M3 pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-12CWQ10FN-M3 - Vishay General Semiconductor - Diodes Division.

Datasheets
VS-12CWQ10FN-M3.pdf
PCN Obsolescence/ EOL
Multiple Devices Improvements 12/Sep/2016.pdf
PCN Assembly/Origin
LeadFrame/Mold Compound Chgs 12/Sep/2016.pdf

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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Vishay General Semiconductor - Diodes Division

VS-12CWQ10FN-M3

Vishay General Semiconductor - Diodes Division
32D-VS-12CWQ10FN-M3

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