V60D100C-M3/I - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

V60D100C-M3/I

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-power Schottky rectifier diode array in a compact DPAK package.

Product Features and Performance

Fast recovery time <= 500 ns

High current rating up to 30A per diode

Low forward voltage drop of 810 mV at 30A

Operating temperature range of -40°C to 150°C

Reverse voltage rating of 100V

Product Advantages

Compact and efficient power conversion

Reduced switching losses

Improved thermal management

Reliable and robust design

Key Technical Parameters

Current Reverse Leakage @ Vr: 1 mA @ 120 V

Voltage Forward (Vf) (Max) @ If: 810 mV @ 30 A

Voltage DC Reverse (Vr) (Max): 100 V

Current Average Rectified (Io) (per Diode): 30A

Diode Configuration: 1 Pair Common Cathode

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Reliable and rugged construction

Compatibility

The V60D100C-M3/I is compatible with various high-power electronic applications.

Application Areas

Switch-mode power supplies

Industrial and automotive electronics

Power conversion and control systems

Product Lifecycle

The V60D100C-M3/I is an active product and not nearing discontinuation. Replacement and upgrade options are available.

Key Reasons to Choose This Product

High-power handling capacity up to 30A per diode

Fast recovery time of <= 500 ns for improved efficiency

Low forward voltage drop of 810 mV at 30A for reduced power losses

Wide operating temperature range of -40°C to 150°C

Compact DPAK package for space-constrained designs

Reliable and RoHS3 compliant construction for long-term use