US1MHE3/61T - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

US1MHE3/61T

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-speed, high-voltage silicon rectifier diode

Designed for use in high-frequency switch-mode power supplies and other power conversion applications

Product Features and Performance

Fast reverse recovery time of 75 ns

High reverse voltage of 1000 V

Low forward voltage drop of 1.7 V at 1 A

Low reverse leakage current of 10 µA at 1000 V

Compact DO-214AC (SMA) surface-mount package

Operating temperature range of -55°C to 150°C

Product Advantages

Excellent performance in high-frequency, high-voltage applications

Compact and efficient surface-mount package

Wide operating temperature range

Key Technical Parameters

Reverse Voltage (Vr): 1000 V

Forward Voltage (Vf): 1.7 V @ 1 A

Reverse Leakage Current (Ir): 10 µA @ 1000 V

Reverse Recovery Time (trr): 75 ns

Capacitance (Cd): 10 pF @ 4 V, 1 MHz

Average Rectified Current (Io): 1 A

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Suitable for use in high-frequency switch-mode power supplies and other power conversion applications

Application Areas

Power supplies

Inverters

Converters

Motor drives

Welding equipment

X-ray equipment

Industrial and medical electronics

Product Lifecycle

This product is currently in production and available for purchase.

Replacement or upgraded models may be available in the future.

Key Reasons to Choose This Product

Excellent high-voltage and high-frequency performance

Fast reverse recovery time for efficient power conversion

Low forward voltage drop for improved efficiency

Compact and efficient surface-mount package

Wide operating temperature range for versatile applications

Reliable and RoHS3-compliant design for quality and safety