SS3H10-E3/9AT - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

SS3H10-E3/9AT

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

Vishay's SS3H10-E3/9AT Schottky diode is a high-performance discrete semiconductor component designed for a wide range of applications.

Product Features and Performance

Fast recovery time of ≤ 500 ns for current > 200 mA

Average rectified current (IO) of 3A

Maximum reverse voltage (VR) of 100V

Forward voltage drop (VF) of 800 mV at 3A

Product Advantages

Excellent high-frequency performance

High current handling capability

Low forward voltage drop

Surface mount package for compact design

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 100 V

Current Average Rectified (Io): 3A

Current Reverse Leakage @ Vr: 20 A @ 100 V

Voltage Forward (Vf) (Max) @ If: 800 mV @ 3 A

Operating Temperature Junction: -65°C ~ 175°C

Technology: Schottky

Speed: Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Meets industry standards for quality and reliability

Compatibility

Fits in DO-214AB (SMC) package

Tape & Reel (TR) packaging

Application Areas

Switched-mode power supplies

Freewheeling diodes

Polarity protection

High-frequency rectification

Product Lifecycle

This product is currently in active production and widely available.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

High-performance Schottky diode with fast recovery time and high current capability

Low forward voltage drop for improved efficiency

Surface mount package for compact design

RoHS compliance for environmental friendliness

Proven reliability and quality from a trusted manufacturer