SS1H10HE3_B/I - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

SS1H10HE3_B/I

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

Schottky Diode, Fast Recovery, Surface Mount

Product Features and Performance

Fast recovery time of ≤ 500 ns

High current capability up to 1 A

Low forward voltage drop of 860 mV @ 2 A

Wide operating temperature range up to 175°C

Reverse voltage rating up to 100 V

Product Advantages

Excellent high-frequency performance

Efficient power conversion

High reliability and robustness

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 100 V

Current Average Rectified (Io): 1 A

Current Reverse Leakage @ Vr: 1 A @ 100 V

Voltage Forward (Vf) (Max) @ If: 860 mV @ 2 A

Technology: Schottky

Operating Temperature Junction: 175°C (Max)

Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Quality and Safety Features

RoHS3 compliant

AEC-Q100 qualified for automotive applications

Compatibility

Suitable for a wide range of applications requiring fast, high-efficiency rectification

Application Areas

Automotive electronics

Power supplies

Switching mode power supplies (SMPS)

Freewheeling diodes

Reverse polarity protection

Product Lifecycle

Current production, no plans for discontinuation

Replacement parts and upgrades available

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient power conversion

Wide operating temperature range for reliable operation in harsh environments

Low forward voltage drop for improved energy efficiency

Fast recovery time for high-speed switching applications

High current capability for high-power requirements

AEC-Q100 qualification for automotive use