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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleS1GHE3_A/I
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S1GHE3_A/I - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
S1GHE3_A/I
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-S1GHE3_A/I
ECAD Model
Parts Description
DIODE GEN PURP 400V 1A DO214AC
Detailed Description
Package
DO-214AC, SMA
Data sheet
S1A, S1B, S1D, S1G, S1J, S1K, S1M.pdf
RoHs Status
ROHS3 Compliant
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In stock: 416650

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Specifications

S1GHE3_A/I Tech Specifications
Vishay General Semiconductor - Diodes Division - S1GHE3_A/I technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - S1GHE3_A/I

Product Attribute Attribute Value  
Manufacturer Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A  
Voltage - DC Reverse (Vr) (Max) 400 V  
Technology Standard  
Supplier Device Package DO-214AC (SMA)  
Speed Standard Recovery >500ns, > 200mA (Io)  
Series Automotive, AEC-Q101  
Reverse Recovery Time (trr) 1.8 µs  
Product Attribute Attribute Value  
Package / Case DO-214AC, SMA  
Package Tape & Reel (TR)  
Operating Temperature - Junction -55°C ~ 150°C  
Mounting Type Surface Mount  
Current - Reverse Leakage @ Vr 1 µA @ 400 V  
Current - Average Rectified (Io) 1A  
Capacitance @ Vr, F 12pF @ 4V, 1MHz  
Base Product Number S1G  

Parts Introduction

Manufacturer Part Number

S1GHE3_A/I

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-performance single-phase rectifier diode suitable for automotive and industrial applications

Product Features and Performance

Low forward voltage drop

High surge current capability

Fast recovery time

Low leakage current

Meets AEC-Q101 qualification requirements

Product Advantages

Improved efficiency and reliability

Suitable for high-frequency, high-power switching applications

Robust design for harsh operating environments

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 400 V

Current Average Rectified (Io): 1 A

Reverse Recovery Time (trr): 1.8 μs

Capacitance @ Vr, F: 12 pF @ 4 V, 1 MHz

Quality and Safety Features

RoHS3 compliant

Automotive-grade, AEC-Q101 qualified

Compatibility

Compatible with a wide range of automotive and industrial applications

Application Areas

Automotive electronics (e.g., engine control, ignition systems, lighting)

Industrial power supplies and converters

General-purpose rectification in various electronic devices

Product Lifecycle

Current production model, no known discontinuation plans

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

High reliability and performance for demanding applications

Meets stringent automotive and industrial quality standards

Optimized for efficiency and power density in switching circuits

Robust design for harsh operating environments

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division S1GHE3_A/I

Product Attribute S1GHE3_A/I S1GB-13-F S1GB-13 S1GM RSG
Part Number S1GHE3_A/I S1GB-13-F S1GB-13 S1GM RSG
Manufacturer Vishay General Semiconductor - Diodes Division Diodes Incorporated Diodes Incorporated Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 400 V
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 175°C
Supplier Device Package DO-214AC (SMA) SMB SMB Micro SMA
Series Automotive, AEC-Q101 - - -
Base Product Number S1G S1G S1G S1G
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Current - Reverse Leakage @ Vr 1 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 1 µA @ 400 V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB 2-SMD, Flat Lead
Capacitance @ Vr, F 12pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 5pF @ 4V, 1MHz
Reverse Recovery Time (trr) 1.8 µs 3 µs 3 µs 780 ns
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Technology Standard Standard Standard Standard

S1GHE3_A/I Datasheet PDF

Download S1GHE3_A/I pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for S1GHE3_A/I - Vishay General Semiconductor - Diodes Division.

Datasheets
S1A, S1B, S1D, S1G, S1J, S1K, S1M.pdf
Other Related Documents
Packaging Information.pdf
PCN Assembly/Origin
Assembly Site 26/Aug/2021.pdf
PCN Obsolescence/ EOL
PCN-DD-025-2012-Rev-0 28/Nov/2012.pdf

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Delivery Cost

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  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

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  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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S1GHE3_A/I Image

S1GHE3_A/I

Vishay General Semiconductor - Diodes Division
32D-S1GHE3_A/I

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