MBR10100-M3/4W - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

MBR10100-M3/4W

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

Discrete Semiconductor Products - Diodes - Rectifiers - Single

Product Features and Performance

Schottky Diode Technology

Fast Recovery ≤ 500ns, > 200mA (Io)

Current Average Rectified (Io): 10A

Voltage DC Reverse (Vr) (Max): 100 V

Voltage Forward (Vf) (Max) @ If: 800 mV @ 10 A

Current Reverse Leakage @ Vr: 100 A @ 100 V

Operating Temperature Junction: -65°C ~ 150°C

Product Advantages

High efficiency due to low forward voltage drop

Fast switching speed for high-frequency applications

High reliability and ruggedness

Key Technical Parameters

Schottky Diode Technology

Voltage DC Reverse (Vr) (Max): 100 V

Current Average Rectified (Io): 10A

Voltage Forward (Vf) (Max) @ If: 800 mV @ 10 A

Current Reverse Leakage @ Vr: 100 A @ 100 V

Operating Temperature Junction: -65°C ~ 150°C

Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Through Hole Mounting

TO-220-2 Package

Application Areas

High-frequency power supplies

Switching power supplies

Freewheeling diodes

Reverse battery protection

Automotive electronics

Product Lifecycle

Currently available

Replacement and upgrade options may be available

Key Reasons to Choose This Product

High efficiency and fast switching speed for high-frequency applications

High reliability and ruggedness

Wide operating temperature range

RoHS3 compliance for environmental responsibility

Compatible with common through-hole mounting and TO-220-2 package