FA57SA50LC - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

FA57SA50LC

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

This is a high-power N-channel MOSFET transistor from the HEXFET series, designed for use in various power electronic applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 500 V

Maximum Gate-Source Voltage (Vgs) of ±20 V

Maximum Drain Current (Id) of 57 A at 25°C

Low On-state Resistance (Rds(on)) of 80 mΩ at 34 A, 10 V

Input Capacitance (Ciss) of 10,000 pF at 25 V

Maximum Power Dissipation of 625 W at 25°C

Product Advantages

Excellent performance in high-voltage, high-current applications

Efficient power conversion and control

Robust and reliable design

Key Technical Parameters

N-Channel MOSFET technology

Threshold Voltage (Vgs(th)) of 4 V at 250 A

Gate Charge (Qg) of 338 nC at 10 V

Quality and Safety Features

Compliant with RoHS directives (RoHS non-compliant)

Housed in the SOT-227 package for chassis mount applications

Compatibility

Suitable for use in a wide range of power electronic circuits and systems

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Welding equipment

Industrial automation and control

Product Lifecycle

This product is currently available and actively supported by the manufacturer.

No information on potential discontinuation or availability of replacements or upgrades.

Key Reasons to Choose This Product

High-voltage, high-current capability for demanding power applications

Low on-state resistance for efficient power conversion

Robust and reliable design for long-term operation

Compatibility with a wide range of power electronic systems and circuits