Manufacturer Part Number
FA38SA50LC
Manufacturer
Vishay General Semiconductor - Diodes Division
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
RoHS non-compliant
Supports Chassis Mount
Operating Temperature: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs) Max: ±20V
Drain Current (Id) Continuous @ 25°C: 38A
On-Resistance (Rds On) Max: 130mΩ @ 23A, 10V
Input Capacitance (Ciss) Max: 6900pF @ 25V
Power Dissipation (Tc) Max: 500W
Gate Charge (Qg) Max: 420nC @ 10V
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Suitable for high-power applications
Key Technical Parameters
MOSFET Technology: Metal Oxide Semiconductor
Threshold Voltage (Vgs(th)) Max: 4V @ 250A
Drive Voltage Range: 10V (Max Rds On, Min Rds On)
Quality and Safety Features
RoHS non-compliant
Compatibility
Fits SOT-227-4, miniBLOC package
Application Areas
High-power electronic circuits
Power conversion and control systems
Industrial and automotive applications
Product Lifecycle
This product is currently available, with no known discontinuation plans.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Exceptional voltage and current handling
Low on-resistance for efficiency
Suitable for high-power, high-performance applications
Reliable and durable construction
FA3698FFujitsu Electronics America, Inc.