ES1DHE3_A/H - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

ES1DHE3_A/H

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-Speed, Ultrafast Recovery, Epitaxial Schottky Rectifier Diode

Product Features and Performance

Fast recovery time of 25ns

Low reverse leakage current of 5A @ 200V

Low forward voltage drop of 920mV @ 1A

Wide operating temperature range of -55°C to 150°C

Capacitance of 10pF @ 4V, 1MHz

Reverse recovery time ≤ 500ns, forward current > 200mA (Io)

Average rectified current of 1A

Product Advantages

Ultrafast recovery time for high-frequency switching applications

Low forward voltage drop for improved efficiency

Wide temperature range for use in harsh environments

Small footprint surface mount package

Key Technical Parameters

Reverse Voltage (Vr): 200V

Forward Voltage (Vf): 920mV @ 1A

Reverse Leakage Current (Ir): 5A @ 200V

Capacitance (Cd): 10pF @ 4V, 1MHz

Reverse Recovery Time (trr): 25ns

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

AEC-Q101 automotive qualified

Compatibility

DO-214AC (SMA) surface mount package

Suitable for high-frequency switching applications

Application Areas

Switch-mode power supplies

Automotive electronics

Industrial equipment

Telecommunications equipment

Product Lifecycle

Actively manufactured and supported

Replacement parts and upgrades available

Key Reasons to Choose This Product

Ultrafast recovery time for high-frequency switching

Low forward voltage drop for improved efficiency

Wide temperature range for use in harsh environments

Small footprint surface mount package for space-constrained designs

Automotive qualification for reliable performance in vehicles

Readily available and actively supported by the manufacturer