Manufacturer Part Number
BYM10-100-E3/96
Manufacturer
Vishay General Semiconductor - Diodes Division
Introduction
High-speed, high-power silicon epitaxial rectifier diode
Product Features and Performance
High-speed, low-reverse-recovery-time performance
High-power handling capability
Low forward voltage drop
Exceptional resistance to surge currents
Product Advantages
Suitable for high-frequency switch mode power supplies
Excellent for use in general rectification applications
Robust design provides reliability and long lifespan
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 100 V
Current Average Rectified (Io): 1A
Current Reverse Leakage @ Vr: 10 A @ 100 V
Voltage Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Operating Temperature Junction: -65°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Quality and Safety Features
ROHS3 Compliant
Robust glass MELF package for high reliability
Compatibility
Suitable for surface mount applications
Application Areas
Ideal for use in high-frequency switch mode power supplies
Suitable for general rectification applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-speed, low-reverse-recovery-time performance for efficient power conversion
High-power handling capability for reliable operation
Low forward voltage drop for reduced power losses
Robust glass MELF package for long lifespan and reliability
Suitable for high-frequency switch mode power supplies and general rectification applications