Manufacturer Part Number
BAS70-04-HE3-08
Manufacturer
Vishay General Semiconductor – Diodes Division
Introduction
Discrete Semiconductor Diode
Product Features and Performance
Schottky diode
Reverse recovery time of 5 ns
Forward voltage of 1 V @ 15 mA
Reverse leakage current of 100 nA @ 50 V
Operating temperature up to 125°C
Suitable for small signal applications up to 200 mA
Product Advantages
Fast switching speed
Low forward voltage
High reverse voltage
Small form factor
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 70 V
Current Average Rectified (Io) (per Diode): 200 mA (DC)
Diode Configuration: 1 Pair Series Connection
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive qualified
Compatibility
SOT-23-3 package
Tape & Reel (TR) packaging
Application Areas
Automotive electronics
Power supplies
Telecommunications equipment
Consumer electronics
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent high-speed switching performance
Low power consumption
Compact and space-saving design
Automotive-grade reliability
Wide operating temperature range