BAS386-TR - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

BAS386-TR

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

The BAS386-TR is a Schottky diode in a MicroMELF package, suitable for a variety of applications.

Product Features and Performance

Reverse leakage current of 5 A at 40 V

Forward voltage of 900 mV at 100 mA

Operating temperature up to 125°C

Capacitance of 880 pF at 0 V and 1 MHz

Reverse voltage up to 50 V

Average rectified current of 200 mA

Product Advantages

Compact MicroMELF package

Schottky technology for fast switching

Suitable for small signal applications up to 200 mA

Key Technical Parameters

Technology: Schottky

Reverse Leakage Current: 5 A @ 40 V

Forward Voltage: 900 mV @ 100 mA

Operating Temperature: 125°C (Max)

Capacitance: 880 pF @ 0 V, 1 MHz

Reverse Voltage: 50 V (Max)

Average Rectified Current: 200 mA

Quality and Safety Features

RoHS3 compliant

Surface mount package

Compatibility

Suitable for a variety of small signal applications

Application Areas

General-purpose rectification

Voltage clamping

Polarity protection

High-frequency switching

Product Lifecycle

The BAS386-TR is an active product and not nearing discontinuation.

Replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Compact MicroMELF package for space-constrained designs

Schottky technology for fast switching performance

Wide operating temperature range up to 125°C

Suitable for small signal applications up to 200 mA

RoHS3 compliance for environmental considerations