1N5408-E3/73 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

1N5408-E3/73

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-power silicon rectifier diode

Suitable for use in power supply applications and industrial equipment

Product Features and Performance

High reverse voltage rating of 1000V

Average rectified current of 3A

Low forward voltage drop of 1.2V @ 3A

High-speed recovery time > 500ns

Wide operating temperature range of -50°C to 150°C

Low junction capacitance of 30pF @ 4V, 1MHz

Product Advantages

Highly reliable and durable construction

Efficient power conversion and low power loss

Suitable for a wide range of applications

Key Technical Parameters

Reverse Voltage (Vr): 1000V

Forward Voltage (Vf): 1.2V @ 3A

Reverse Leakage Current (Ir): 5A @ 1000V

Junction Capacitance (Cj): 30pF @ 4V, 1MHz

Recovery Time (trr): > 500ns, > 200mA (Io)

Average Rectified Current (Io): 3A

Operating Temperature Range: -50°C to 150°C

Quality and Safety Features

RoHS3 compliant

Meets industrial safety and reliability standards

Compatibility

Suitable for use in a wide range of power supply and industrial equipment applications

Application Areas

Power supplies

Industrial equipment

Automotive electronics

Lighting ballasts

Welding equipment

Product Lifecycle

This product is an established and widely used part

Replacements and upgrades are readily available from Vishay and other manufacturers

Key Reasons to Choose This Product

Robust and reliable performance

Wide operating temperature range

Efficient power conversion with low power loss

Suitable for a broad range of power supply and industrial applications

Long product lifecycle with available replacements and upgrades