Manufacturer Part Number
TTC5200(Q)
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
High power handling capability up to 150W
High voltage rating up to 230V
High collector current up to 15A
High DC current gain (hFE) of at least 80 at 1A, 5V
High transition frequency up to 30MHz
Product Advantages
Suitable for high power switching and amplification applications
Robust design for reliable operation
Wide operating temperature range up to 150°C
Key Technical Parameters
Power Rating: 150W
Collector-Emitter Breakdown Voltage: 230V
Collector Current (Max): 15A
Collector Cutoff Current (Max): 5A
Collector-Emitter Saturation Voltage: 3V @ 800mA, 8A
DC Current Gain (hFE): 80 (Min) @ 1A, 5V
Transition Frequency: 30MHz
Quality and Safety Features
RoHS Compliant
Toshiba's quality and reliability standards
Compatibility
Through-hole mounting on TO-3P(L) package
Application Areas
High power switching circuits
High power amplifiers
Industrial power electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades available from Toshiba
Key Reasons to Choose This Product
Excellent power handling capability
High voltage and current ratings
High frequency performance
Reliable and robust design
Proven quality from Toshiba
TTC1-33W+Mini-Circuits1:1 CORE & WIRE TRANSFORMER, 4.5