TTC5200(Q) - Toshiba Semiconductor and Storage

Manufacturer Part Number

TTC5200(Q)

Manufacturer

TAEC Product (Toshiba Electronic Devices and Storage Corporation)

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

High power handling capability up to 150W

High voltage rating up to 230V

High collector current up to 15A

High DC current gain (hFE) of at least 80 at 1A, 5V

High transition frequency up to 30MHz

Product Advantages

Suitable for high power switching and amplification applications

Robust design for reliable operation

Wide operating temperature range up to 150°C

Key Technical Parameters

Power Rating: 150W

Collector-Emitter Breakdown Voltage: 230V

Collector Current (Max): 15A

Collector Cutoff Current (Max): 5A

Collector-Emitter Saturation Voltage: 3V @ 800mA, 8A

DC Current Gain (hFE): 80 (Min) @ 1A, 5V

Transition Frequency: 30MHz

Quality and Safety Features

RoHS Compliant

Toshiba's quality and reliability standards

Compatibility

Through-hole mounting on TO-3P(L) package

Application Areas

High power switching circuits

High power amplifiers

Industrial power electronics

Product Lifecycle

Current production model, no plans for discontinuation

Replacements and upgrades available from Toshiba

Key Reasons to Choose This Product

Excellent power handling capability

High voltage and current ratings

High frequency performance

Reliable and robust design

Proven quality from Toshiba