Manufacturer Part Number
TPH4R50ANH,L1Q
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Introduction
High-performance N-channel MOSFET for power applications
Product Features and Performance
Low on-resistance (4.5 mΩ) at 30 A, 10 V
High drain current (60 A at 25°C)
Low gate charge (58 nC at 10 V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent energy efficiency
Compact and lightweight design
High reliability and durability
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate to Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 4.5 mΩ @ 30 A, 10 V
Drain Current (Id): 60 A @ 25°C
Input Capacitance (Ciss): 5200 pF @ 50 V
Power Dissipation: 1.6 W (Ta), 78 W (Tc)
Quality and Safety Features
RoHS compliant
Suitable for high-temperature applications
Compatibility
Surface mount design
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent energy efficiency due to low on-resistance
Compact and lightweight design
High reliability and durability for demanding applications
Wide operating temperature range
Suitable for high-current, high-voltage power applications