Manufacturer Part Number
TPH2900ENH,L1Q
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
High-voltage, high-current N-channel power MOSFET in a compact 8-SOP Advance (5x5) package
Product Features and Performance
200V drain-to-source voltage
33A continuous drain current at 25°C
29mΩ maximum on-resistance at 16.5A, 10V
2200pF maximum input capacitance at 100V
78W maximum power dissipation
Product Advantages
High voltage and current handling capability
Low on-resistance for improved efficiency
Compact 8-SOP Advance (5x5) package
Suitable for high-power switching applications
Key Technical Parameters
Vds: 200V
Vgs (max): ±20V
Rds(on) (max): 29mΩ @ 16.5A, 10V
Id (continuous): 33A @ 25°C
Ciss (max): 2200pF @ 100V
Pd (max): 78W
Quality and Safety Features
RoHS compliant
Designed for reliable and safe operation
Compatibility
Surface mount, compatible with standard PCB assembly processes
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no signs of discontinuation. Replacement or upgrade options available from the manufacturer.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Compact and space-saving package
Suitable for a wide range of high-power switching applications
Reliable and safe operation with RoHS compliance