Manufacturer Part Number
TPH1400ANH,L1Q
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
High-performance N-channel MOSFET with low on-state resistance
Product Features and Performance
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 13.6 mΩ @ 12 A, 10 V
Current Continuous Drain (Id) @ 25°C: 24 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Power Dissipation (Max): 1.6 W (Ta), 48 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 300 A
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Product Advantages
Low on-state resistance
High current capability
High power dissipation
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10 V
Mounting Type: Surface Mount
Quality and Safety Features
RoHS Compliant
Compatibility
8-SOP Advance (5x5) package
Tape & Reel (TR) packaging
Application Areas
Power management
Switching circuits
Motor control
Product Lifecycle
Current product
Availability of replacements or upgrades unknown
Key Reasons to Choose This Product
Excellent low on-state resistance
High current and power handling capability
Compact surface mount package
Suitable for a wide range of power management and switching applications