Manufacturer Part Number
TMBT3904,LM
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
General-purpose NPN bipolar junction transistor
Product Features and Performance
Wide operating temperature range up to 150°C
Low collector-emitter saturation voltage
High transition frequency up to 300 MHz
High DC current gain of at least 100 at 10 mA, 1 V
Low collector cutoff current of max 100 nA
Product Advantages
Suitable for various amplifier and switching applications
Compact surface mount package
RoHS compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 50 V
Collector Current (Max): 150 mA
Power Dissipation (Max): 320 mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS compliant
Reliable and durable performance
Compatibility
Suitable for surface mount applications
Compatible with standard soldering processes
Application Areas
Amplifiers
Switches
Small signal applications
Product Lifecycle
This product is currently in production
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
Wide operating temperature range
High transition frequency for fast switching
Low saturation voltage for efficient performance
Compact surface mount package for space-saving designs
RoHS compliance for environmentally friendly applications
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