Manufacturer Part Number
TK8P65W,RQ
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Introduction
Power MOSFET Transistor
Product Features and Performance
N-Channel MOSFET
High drain-source voltage (650 V)
Low on-resistance (670 mΩ @ 3.9 A, 10 V)
High current capability (7.8 A continuous drain current)
Low input capacitance (570 pF @ 300 V)
High power dissipation (80 W)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Suitable for high voltage, high power applications
Efficient power switching and control
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 650 V
Gate-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 670 mΩ @ 3.9 A, 10 V
Continuous Drain Current (Id): 7.8 A
Input Capacitance (Ciss): 570 pF @ 300 V
Power Dissipation (Pd): 80 W
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount assembly
Designed for high-quality and safe operation
Compatibility
Compatible with a wide range of power electronics and power management applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and household appliances
Automotive electronics
Product Lifecycle
This product is currently in production and available for purchase. No discontinuation or replacement information is provided.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Compact DPAK package for space-constrained designs
RoHS compliance for environmentally-friendly applications
