Manufacturer Part Number
TK62N60W,S1VF
Manufacturer
Toshiba Electronic Devices and Storage Corporation (TAEC)
Introduction
High-performance N-channel MOSFET with fast switching and high efficiency
Product Features and Performance
High voltage capability up to 600V
Low on-resistance down to 40mOhm
High continuous drain current up to 61.8A
Low gate charge of 180nC
Fast switching with short turn-on and turn-off times
Suitable for high-frequency switching applications
Product Advantages
Excellent power efficiency and thermal performance
Reliable and robust design
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Continuous Drain Current (Id) @ 25°C: 61.8A
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V
Power Dissipation (Max): 400W
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
TO-247 package for through-hole mounting
Application Areas
Switch-mode power supplies
Motor drives
Industrial electronics
Welding equipment
Lighting systems
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High voltage and current capabilities for demanding applications
Excellent power efficiency and thermal performance
Reliable and robust design for long-term operation
Suitable for a wide range of high-power, high-frequency switching applications
RoHS3 compliance for environmental sustainability
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