Manufacturer Part Number
TK55S10N1,LQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation (TAEC)
Introduction
High-performance N-channel power MOSFET for use in power supply and motor drive applications
Product Features and Performance
100V drain-source voltage
5mΩ on-resistance at 27.5A, 10V
55A continuous drain current at 25°C
157W power dissipation at 25°C case temperature
Low input capacitance of 3280pF at 10V
Fast switching speed
Product Advantages
Excellent on-resistance and current handling
High power density
Efficient power conversion
Reliable and robust performance
Key Technical Parameters
Drain-source voltage (Vdss): 100V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 6.5mΩ @ 27.5A, 10V
Continuous drain current (Id): 55A @ 25°C
Power dissipation (Pd): 157W @ 25°C case temperature
Input capacitance (Ciss): 3280pF @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for use in power supply and motor drive applications
Application Areas
Power supply
Motor drive
Inverter
Switching regulator
DC-DC converter
Product Lifecycle
Currently in production
No indication of discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power handling and efficiency
High current capability
Low on-resistance for reduced power losses
Fast switching speed for improved system performance
Reliable and robust design for long-term operation