Manufacturer Part Number
TK100E10N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Optimized chip design for low on-resistance
Suitable for high-frequency switching applications
Low gate charge for high-speed switching
Low Coss and Crss for high efficiency
Product Advantages
Excellent on-resistance vs. gate charge tradeoff
Superior switching performance
High power density
Reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 3.4 mΩ @ 50 A, 10 V
Current Continuous Drain (Id) @ 25°C: 100 A
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Power Dissipation (Max): 255 W
Quality and Safety Features
RoHS3 compliant
Reliable TO-220 package
Compatibility
Suitable for various high-frequency switching applications, such as:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial equipment
Home appliances
Automotive electronics
Renewable energy systems
Product Lifecycle
This product is currently available and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High efficiency and switching speed
Reliable operation in harsh environments
Compatibility with a wide range of applications
Availability of sample and quantity orders from the manufacturer