Manufacturer Part Number
SSM6K513NU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
High-performance N-channel MOSFET for power management applications
Product Features and Performance
30V Drain-Source Voltage
15A Continuous Drain Current
Low On-Resistance of 8.9mΩ
Fast Switching Speed
High Power Density
Operating Temperature up to 150°C
Product Advantages
High Efficiency
Reliable Operation
Compact Footprint
Easy to Use
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.9mΩ
Drain Current (Id): 15A
Input Capacitance (Ciss): 1130pF
Power Dissipation: 1.25W
Quality and Safety Features
RoHS3 Compliant
Reliable Performance
Robust Design
Compatibility
Compatible with a wide range of power management applications
Application Areas
Power Supplies
DC-DC Converters
Motor Drives
Lighting Applications
Industrial Electronics
Product Lifecycle
Currently available, no discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
High Efficiency and Low Losses
Reliable and Robust Operation
Compact Footprint for Space-constrained Designs
Easy to Integrate into Power Management Systems
Wide Operating Temperature Range
