Manufacturer Part Number
SSM6J501NU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Current Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Product Advantages
ROHS3 Compliant
Surface Mount Packaging
Key Technical Parameters
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-UDFNB (2x2)
Series: U-MOSVI
Package: Tape & Reel (TR)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Surface Mount
Quality and Safety Features
ROHS3 Compliant
Compatibility
N/A
Application Areas
Discrete Semiconductor Applications
Product Lifecycle
Current product, no information on discontinuation or replacements.
Key Reasons to Choose This Product
ROHS3 Compliant
Surface Mount Packaging
Wide operating temperature range up to 150°C
Low Rds(on) of 15.3mOhm
High continuous drain current of 10A
Suitable for various discrete semiconductor applications