Manufacturer Part Number
SSM6J412TU, LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
The SSM6J412TU, LF is a P-channel MOSFET transistor from Toshiba Electronic Devices and Storage Corporation.
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
7mOhm Maximum On-Resistance (Rds(on)) at 3A, 4.5V
4A Continuous Drain Current (Id) at 25°C
840pF Maximum Input Capacitance (Ciss) at 10V
1W Maximum Power Dissipation at 25°C
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
Product Advantages
Low on-resistance for improved efficiency
High drain current capability
Small surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 42.7mOhm @ 3A, 4.5V
Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 840pF @ 10V
Power Dissipation: 1W @ 25°C
Quality and Safety Features
RoHS3 compliant
Meets environmental and safety standards
Compatibility
Suitable for a wide range of electronic applications requiring a P-channel MOSFET transistor
Application Areas
Power management circuits
Switching circuits
General purpose electronic applications
Product Lifecycle
This product is an active and ongoing part of Toshiba's product lineup.
Replacement and upgrade options are available from Toshiba.
Key Reasons to Choose This Product
Low on-resistance for improved efficiency
High drain current capability for power-hungry applications
Small surface mount package for compact design
RoHS3 compliance for environmental responsibility
Ongoing product support and availability of replacements/upgrades from Toshiba
