Manufacturer Part Number
SSM3K15AMFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
On-Resistance (Rds on) of 3.6Ω @ 10mA, 4V
Continuous Drain Current (Id) of 100mA at 25°C
Input Capacitance (Ciss) of 13.5pF @ 3V
Power Dissipation (Max) of 150mW at 25°C
Operating Temperature Range up to 150°C
Product Advantages
Low on-resistance for improved efficiency
Compact SOT-723 surface mount package
Suitable for a wide range of applications
Key Technical Parameters
N-Channel MOSFET Transistor
Vdss: 30V
Vgs (Max): ±20V
Rds On (Max): 3.6Ω @ 10mA, 4V
Ciss (Max): 13.5pF @ 3V
Power Dissipation (Max): 150mW
Quality and Safety Features
RoHS3 Compliant
Meets high reliability standards
Compatibility
Suitable for a variety of electronic devices and circuits
Application Areas
Switching applications
Power management circuits
Amplifier circuits
General-purpose electronics
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Low on-resistance for improved efficiency
Wide operating temperature range up to 150°C
Compact surface mount package
Reliable and RoHS3 compliant
Suitable for a variety of applications
